To study the influence of electron irradiation on the reliability of silicon carbide metal-oxide-semiconductor field-effect transistor(SiC MOSFET)with different aging degrees of the gate oxide,the electrical characteristics of SiC MOSFET were analyzed by combining high-temperature gate bias and electron irradiation experiments.The influence of electron irradiation on the threshold voltage of SiC MOSFET after the gate oxide was stressed by high temperature and a strong electric field was discussed.To avoid the impact of the packaging material on the threshold voltage under high temperature and electron irradiation,the device under test was exposed to air during the experiment.Experimental results show that the threshold voltage after the high-temperature positive gate bias experiment was more sensitive to electron irradiation.The exponential relationship of the influence of electron irradiation on the threshold voltage of SiC MOSFET after the high-temperature gate bias aging was proposed.The threshold voltage after the high-temperature gate bias at 39 V and 150 ℃ for 2 h can be restored to the initial value by 0.2 MeV and 300 kGy electron irradiation.A basic numerical model of SiC MOSFET was established in the Sentaurus TCAD simulator.By setting the electron concentration and hole traps in the oxide,the effect of high-temperature gate bias and electron irradiation on the threshold voltage of the device was simulated,and the threshold voltage recovery mechanism was discussed.
关键词
SiC/MOSFET/高温栅偏/电子辐照/阈值电压
Key words
Silicon carbide metal-oxide-semiconductor field-effect transistor(SiC MOSFET)/high-temperature gate bias/electron irradiation/threshold voltage
维普
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