首页|高本振中频隔离超宽带混频芯片设计

高本振中频隔离超宽带混频芯片设计

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超宽带谐波混频器一般采用本振中频双工器,从本振通路引出中频信号.但是当本振频率和中频频率相近或者重叠时,难以实现本振到中频高隔离.本文采用了不同于常用谐波混频器结构,用射频中频双工器替代了本振中频双工器,从射频通路引出中频信号,设计了30~110 GHz 4次谐波混频芯片,并进行了封装实验测试.经测试,4次谐波混频器射频频率30~110 GHz,中频频率1 GHz的变频损耗小于25 dB,DC-15 GHz本振和中频端口间的隔离度可达30 dB,固定本振时中频频率DC-7 GHz变频损耗小于28 dB.因此,本设计可有效隔离频率相近的本振和中频信号,为拓宽中频带宽提供可能.
Design of ultra-broadband mixer chip with high LO-IF isolation
Ultra-broadband harmonic mixers generally use LO-IF duplexers to extract IF signals from the LO circuit. However, when the LO frequency and the IF frequency are similar or overlap, it is difficult to achieve high LO-IF isolation. In this paper, RF-IF duplexer is used to replace the LO-IF duplexer, different from the common harmonic mixer structure, and IF signal is extracted from the RF circuit. A 30~110 GHz fourth harmonic mixer chip is designed and tested. After the four harmonic mixer testing, RF sweep frequency range 30~110 GHz, frequency conversion loss is less than 25 dB at IF frequency 1 GHz. In DC-15 GHz, the isolation between the LO and the IF ports is up to 30 dB. When the local vibration is fixed, the frequency conversion loss of IF sweep frequency DC-7 GHz is less than 28 dB. Therefore, this design can effectively isolate LO and IF signals with similar frequencies, and it is possible to broaden the IF broadband.

mixerharmonic mixerreverse-diode-pairultra-broadband

韩星宇、年夫顺、代秀、张婷

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中北大学仪器与电子学院 太原 030051

中电科思仪科技股份有限公司 青岛 266555

混频器 谐波混频 反向二极管对 超宽带

2024

电子测量与仪器学报
中国电子学会

电子测量与仪器学报

CSTPCD北大核心
影响因子:2.52
ISSN:1000-7105
年,卷(期):2024.38(3)
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