高Al组分AlGaN/AlN/GaN量子级联结构的MOCVD外延研究
Study on MOCVD Epitaxy of High Al Component AlGaN/AlN/GaN Quantum Cascade Structure
吴粤川 1邓文娟1
作者信息
- 1. 东华理工大学机械与电子工程学院,江西 330013
- 折叠
摘要
阐述高Al组分差的GaN/AlN/AlGaN量子级联紫外-红外双色探测结构的设计,并用MOCVD外延实现过程.通过MOCVD监控分析GaN/AlN/AlGaN量子级联结构生长状况,发现外延AlGaN层的整体Al组分偏低.随后用SEM观测样品表面形貌存在凸起,从截面测量各个结构厚度符合设计,用Cary7000分光光度计测试得到279nm以及1700～1 900nm双色吸收峰.
Abstract
This paper describes the design of a GaN/AlN/AlGaN quantum cascade ultraviolet infrared dual color detection structure with high Al component difference,and the implementation process using MOCVD epitaxy.Through MOCVD monitoring and analysis of the growth status of GaN/AlN/AlGaN quantum cascade structures,it was found that the overall Al composition of the epitaxial AlGaN layer was low.Subsequently,SEM was used to observe the surface morphology of the sample with protrusions.The thickness of each structure was measured from the cross-section,which met the design requirements.The Cary7000 spectrophotometer was used to test and obtain dual color absorption peaks at 279nm and 1 700～1 900nm.
关键词
电子器件设计/量子级联/MOCVD/紫外-红外探测/SEM/高Al组分Key words
electronic device design/quantum cascade/MOCVD/UV infrared detection/SEM/high Al component引用本文复制引用
出版年
2024
NETL
NSTL
万方数据