Study on MOCVD Epitaxy of High Al Component AlGaN/AlN/GaN Quantum Cascade Structure
This paper describes the design of a GaN/AlN/AlGaN quantum cascade ultraviolet infrared dual color detection structure with high Al component difference,and the implementation process using MOCVD epitaxy.Through MOCVD monitoring and analysis of the growth status of GaN/AlN/AlGaN quantum cascade structures,it was found that the overall Al composition of the epitaxial AlGaN layer was low.Subsequently,SEM was used to observe the surface morphology of the sample with protrusions.The thickness of each structure was measured from the cross-section,which met the design requirements.The Cary7000 spectrophotometer was used to test and obtain dual color absorption peaks at 279nm and 1 700~1 900nm.
electronic device designquantum cascadeMOCVDUV infrared detectionSEMhigh Al component