Analysis of Improving Surface Flatness of Hybrid Bulk Region in FD-SOI Devices
This paper describes the effective enhancement of short channel effect(SCE)suppression capability in fully depleted silicon on insulator(FDSOI)devices by applying back gate bias voltage in the hybrid bulk region.It proposes an effective process optimization plan to address the surface flatness issue in the Hybrid Bulk area caused by the original FDSOI process flow.In the development of new technological processes,it improves related defects by enhancing surface treatment,optimizing film material,and other methods,achieving a flat surface in the Hybrid Bulk area without related defects,thereby meeting production needs.
integrated circuit manufacturingFDSOIepitaxial process
NETL
NSTL
万方数据
