Analysis of Electronic Structure and Luminescence Mechanism of Indium Nitride Quantum Dot Light-emitting Diodes Based on First Principles Calculation Method
This paper describes the analysis of the band structure,electronic density of states,and band gap parameters of indium nitride quantum dot light-emitting diodes,revealing the distribution of electrons and holes in the devices,as well as the principles of luminescence behavior.Indium nitride quantum dot light-emitting diodes have excellent luminescent properties.
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