基于半绝缘SiC衬底GaN HEMT体陷阱的效应分析
Analysis of GaN HEMT Bulk Trap Effect Based on Semi Insulating SiC Substrate
牛梓戌1
作者信息
- 1. 浙江大学电气工程学院,浙江 310027
- 折叠
摘要
阐述采用背栅测试来表征GaN-on-SiC HEMT的体陷阱效应,过程中分别表现出两段式特征,分别对应Ⅲ族氮化物缓冲层以及半绝缘SiC衬底的加压过程.另外在Silvaco TCAD平台搭建相应的物理模型,仿真体陷阱效应以及在不同衬底电压下的电势分布.
Abstract
This paper describes the use of back gate testing to characterize the volume trap effect of GaN on SiC HEMT,which exhibits a two-stage characteristic corresponding to the pressurization process of the Ⅲ nitride buffer layer and semi insulating SiC substrate.In addition,a corresponding physical model is built on the Silvaco TCAD platform to simulate the volume trap effect and potential distribution under different substrate voltages.
关键词
GaN/HEMTs/半绝缘SiC衬底/背栅测试/体陷阱效应建模/电流坍塌/外延优化Key words
GaN HEMTs/semi insulating SiC substrates/back gate testing/volume trap effect modeling/current collapse/epitaxial optimization引用本文复制引用
出版年
2024
NETL
NSTL
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