Study on the Stability of Corrosion Pit Size in Silicon Carbide Wafers
This paper describes that SiC-based device fabricated on 4H-SiC substrate have significantly superior properties compared with Si-based devices and are widely used in many fields.However,the existence of dislocations on the surface of SiC substrate seriously degenerate the performance and reliability of SiC-based devices.Accurate detection of dislocation defects is very important for the industrial application of silicon carbide.In this paper,we studied the impact factors for the dimension of the dislocation etch pit formed by molten KOH etching on the surface of silicon carbide wafers,so as to obtain the relatively stable corrosion morphology of the dislocation defects,and furthermore,to improve the accuracy and stability of automatic dislocation detection of the etched substrate.
Silicon carbidedislocation detectionstability of etching pit sizeautomatic image analysis
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