This paper describes the design of a 2～6GHz 1W broadband high-efficiency power amplifier chip based on 0.15 μ m GaAs pHEMT process,and provides the results of fixture testing.The amplifier chip adopts a two-stage cascaded amplification structure to ensure high power gain,and is matched with a multi-stage LC structure to broaden the operating frequency band of the amplifier.At the same time,low insertion loss can maintain high efficiency and power of the amplifier.
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