Design of X Band Ultra Low Current Limiter Low Noise Amplifier
This paper describes a 9～10.2GHz limiter low noise amplifier monolithic microwave integrated chip(MMIC)based on GaAs process.The chip limiter is based on the I-Layer 1um thick PIN diode process,and the low noise amplifier is based on the enhanced E-pHMET process,and the first limiter and low noise amplifier are integrated on the same substrate to achieve one-chip development.The limiter in the MMIC adopts a two-stage reverse parallel diode structure to optimize insertion loss and power characteristics.Low noise amplifier adopts three-stage current multiplexing structure and negative feedback matching to obtain high gain,low noise and ultra-low power consumption in a wide frequency band.
circuit designGaAs E-pHEMTPINlimited amplitude low noise amplifierMMICultra-low power consumption
万方数据
维普
