首页|GaAs低压高线性度驱动放大器芯片的设计

GaAs低压高线性度驱动放大器芯片的设计

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阐述一款基于GaAs HBT工艺的0.4~1.1GHz宽带低压高线性度放大器芯片的设计,并给出在片测试结果.该芯片采用结合线性电容的有源偏置和并联负反馈技术,同时发射极增加镇流电阻,使放大器在工作频带范围内实现高线性度、低工作电压和较好的增益平坦度,同时减小工艺波动对放大器性能的影响.
Design of Low Voltage High Linearity Driver Amplifier Chip Base on GaAs
This paper describes a 0.4~1.1 GHz broadband low-voltage hign linearity amplifier Chip based on GaAs HBT process and its onwafertest result.The chip uses active biasing and parallel negative feedback technology combined with libear capacitance,and a ballast resistor is added to the emitter to enable the amplifier to achieve high linearity,low operating voltage and good gain flatness within the operating frequency band,while reducing the effect of small process fluctuations on amplifier performance.

circuit designwidebandlow power consumptionhigh linearityactive bias

王测天、郑其进、廖学介、羊洪轮、邓春、童伟

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成都嘉纳海威科技有限责任公司,四川 610041

西北工业大学微电子学院,陕西 710072

电路设计 宽带 低功耗 高线性度 有源偏置

2024

电子技术
上海市电子学会,上海市通信学会

电子技术

影响因子:0.296
ISSN:1000-0755
年,卷(期):2024.53(8)