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一种高PSRR高稳定性的LDO设计

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提出了一种高PSRR高稳定性的低压差线性稳压器(Low Dropout Linear Regular,LDO),该LDO设计了高精度的带隙基准电路和误差放大器,并利用前馈纹波消除技术设计了电源抑制比增强模块,有效提高了电路中高频的电源抑制比(Power Supply Rejection Ratio,PSRR).基于CSMC 0.18 μm工艺对提出的LDO电路进行仿真验证,芯片面积为 150 μm×131 μm.该LDO在 4.5 V~5.5 V的输入电压范围下,稳定输出不受温度影响的 2.5V电压;于 1mA轻负载下,电源抑制比在低频处为-103.3 dB,在 1 MHz处超过-60 dB.当输出电容为 2.2 μF时,LDO电路轻载下相位裕度为 58.3°,重载下相位裕度为 64.1°,具有良好的系统稳定性.
A LDO Design with High PSRR and High Stability
A high PSRR high stability low dropout linear regular(LDO)is proposed.High precision band gap reference circuit and error amplifier are designed,feed forward ripple elimination technology is used to design the power suppression ratio enhancement module,and the high frequency power supply rejection ratio(PSRR)is effectively improved.The proposed LDO circuit is simulated based on the CSMC 0.18 μm process,with a chip area of 150 μm×1 31 μm.This LDO has a stable output of 2.5 V voltage without temperature in-fluence at the input voltage range of 4.5 V~5.5 V,and at 1 mA light load,the power suppression ratio is-103.3 dB at low frequency and over-60 dB at 1 MHz.When the output capacitance is 2.2 μ F,the LDO circuit phase margin is 58.3° under light load and 64.1° under heavy load,with good system stability.

LDOhigh PSRRhigh stabilityfeed forward ripple elimination technologyband gap reference circuit

杨煌虹、武华、陈翰民、黄沥彬、曹先国

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赣南师范大学物理与电子信息学院,江西 赣州 341000

四川芯盛电子有限公司,四川 绵阳 621000

LDO 高PSRR 高稳定性 前馈纹波消除技术 带隙基准电路

国家自然科学基金江西省教育厅科技项目

61650404GJJ201411

2024

电子器件
东南大学

电子器件

CSTPCD
影响因子:0.569
ISSN:1005-9490
年,卷(期):2024.47(2)
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