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一种高电源抑制比低温度系数的带隙基准电路

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采用两种方式提高了带隙基准电路的电源抑制比.首先,采用峰值电流源结构将三极管自身的增益引入反馈环路,从而提高了环路增益和带隙基准核心的电源抑制比.其次,运用预调制电路进一步提高了电源抑制比.此外,还提出了一种仅需源极负反馈非对称电流镜的曲率补偿电路,该电路具有跨工艺的通用性.所提出的电路采用 0.18 μm BCD工艺进行了验证,并应用在一款降压DC-DC变换器中.结果表明,所提出的电路在2.4 V、3.3 V和5V供电下,低频分别具有127 dB、134 dB和136 dB的高电源抑制比,同时实现了3.74×10-6/℃的低温度系数,总电流消耗仅为6.3 μA~14.5 μA.
A High PSRR Bandgap Reference Circuit with Low Temperature Coefficient
The power supply rejection ratio of the bandgap reference circuit is improved by two ways.Firstly,the peak current source struc-ture is used to introduce the gain of the transistor itself into the feedback loop,thereby improving the loop gain and the power supply rejec-tion ratio of the bandgap reference core.Secondly,the pre-regulator is used to further improve the power supply rejection ratio.Besides,a curvature compensation circuit only requiring a source degeneration asymmetric current mirror is also proposed,which has cross-process versatility.The circuit proposed is verified using a 0.18 μm BCD process and applied to a buck DC-DC convertor.The results show that the proposed circuit has high power supply rejection ratios of 127 dB,134 dB,and 136 dB at 2.4 V,3.3 V,and 5.0 V power supplies respectively,and achieves a low temperature coefficient of 3.74×10-6/℃,with a total current consumption of only 6.3 μA-14.5 μA.

high PSRRcurvature compensationpeaking current sourcepre-regulator

钟超超、孔瀛、莫艳图、宋奎鑫、康磊、梁庭

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中北大学省部共建动态测试技术国家重点实验室,山西 太原 030051

中国航天科技集团公司 北京微电子技术研究所,北京 100029

高电源抑制比 曲率补偿 峰值电流源 预调制电路

2024

电子器件
东南大学

电子器件

CSTPCD
影响因子:0.569
ISSN:1005-9490
年,卷(期):2024.47(3)