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一种Sigmoid为激活函数的高精度ANN电路的设计

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提出了一款以Sigmoid为激活函数的人工神经网络(ANN)电路,实现对目标数据的分类,基于TSMC 180 nm CMOS工艺完成了电路设计、版图设计、仿真与流片测试,芯片面积为 0.337 5 mm2,1.8 V电源电压下电路功耗为 216 μW.3 块芯片的测试结果显示,电路对目标数据的分类准确率为 97.5%,误差在(-3.2%,3.27%)之间,平均误差为-1.51%.人工神经网络电路含有 3 个网络层,由 15 个Sigmoid激活函数神经元电路组成,两输入Sigmoid激活函数神经元电路由两个加权电路与一个Sigmoid激活函数电路组成.后仿真结果显示,在 1.8 V电源电压下,神经元电路的功耗为8.02 μW,最大噪声为 80 pA/√Hz,版图面积为 0.001 mm2,最大相对误差为 1.76%.
Design of a High-Precision ANN Circuit with Sigmoid Activation Function
An artificial neural network(ANN)circuit with Sigmoid activation function(AF)is proposed to realize the classification of tar-get data.Based on the TSMC 180 nm CMOS process,the circuit design,layout design,simulation and chip test are completed.The chip area is 0.337 5 mm2,and the circuit power consumption is 216 μW at 1.8 V supply voltage.The test results of three chips show that the classification accuracy of the circuit for target data is 97.5%,the error is between-3.2%and 3.27%,and the average error is-1.51%.The ANN circuit consists of 3 network layers and is composed of 15 Sigmoid AF neuron circuits.The two-inputs Sigmoid AF neuron cir-cuit is composed of two weighted circuits and a Sigmoid AF circuit.The post-simulation results show that the power consumption of neu-ron circuit is 8.02 μW at 1.8 V supply voltage,the maximum noise is 80 pA/√Hz,the layout area is 0.001 mm2,and the maximum rel-ative error is 1.76%.

Sigmoid neuron circuitCMOSartificial neural network circuit

何从蓉、邢世威、吴晨健

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苏州大学电子信息学院,江苏 苏州 215006

Sigmoid神经元电路 CMOS 人工神经网络电路

2024

电子器件
东南大学

电子器件

CSTPCD
影响因子:0.569
ISSN:1005-9490
年,卷(期):2024.47(3)