Fabrication and Electrical Properties of ZnO-TFT with Chicken Albumen Gate Dielectric by Atomic-Layer Deposition Method
A low-voltage electric-double layer zinc oxide thin film transistor(ZnO-TFT)is prepared through atomic layer deposition(ALD)by using natural chicken albumen as the gate dielectric layer.The electrical properties of the ZnO-TFT are characterized,and the electrical stabilities of the device under constant gate-bias stress and in air environment are investigated.The ZnO-TFT exhibits good electrical prop-erties with a threshold voltage of 0.73 V,a carrier saturation mobility of 9.95 cm2/(V·s),an on/off current ratio of 1.8×104,a subthresh-old swing of 0.33 V/decade and operation voltage of less than 3.0 V.It is found that the electrical properties of ZnO-TFT are instable un-der static gate-bias stress and in air environment.The gate-bias stress instability may be related to the positive charge accumulation and new defect generation near the gate dielectric/ZnO interface,while the degradation of electrical performance in air environment is attribu-ted to the carrier depletion in the channel caused by the absorption of oxygen and the degradation of EDL effect induced by oxidation of chicken albumen.
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