Theoretical and Process Study of a Low Dark Current Infrared Phototransistor
The existing infrared phototransistor chip has a dark current of more than 1 mA/mm2 at 125 degrees,which is not suitable for high temperature application.Targeting at this problem,a study on the influence factor of the dark current of infrared phototransistor is carried out.High-performance infrared phototransistor chips with dark current less than 1 nA/mm2 at room temperature and less than 10 μA/mm2 at 125 degrees are obtained by adding dense boron zone injection in structure and reducing epitaxial resistivity in process,which significantly reduces the dark current of the chip,and makes high temperature applications possible.
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维普
