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一种低温漂高精度分段温度补偿带隙基准源电路

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基于TSMC 0.18 μm CMOS工艺,提出了一种低温漂、高精度的分段温度补偿带隙基准源电路.该电路由启动电路、带隙基准核心电路和低温漂温度补偿电路组成.通过采用分段温度补偿方法,对一阶带隙基准电压温度曲线中的低温段和高温段分别进行补偿,从而显著降低了基准电压的温度系数,最终实现了低温度系数和高精度的带隙基准电压输出.仿真结果表明,当温度从-40℃变化至 125℃时,采用分段温度补偿后的带隙基准电压温度系数大幅减小,从 15.47×10-6 减小为1.141×10-6,有效提高了温度稳定性和电压精度.
A low-temperature drift high-precision segmented temperature compensated bandgap reference source circuit
Based on the TSMC 0.18 μm CMOS process,this design proposes a low temperature drift,high-precision segmented temperature compensation bandgap reference circuit.The circuit consists of a startup circuit,bandgap reference core circuit,and low temperature drift temperature compensation circuit.By adopting a segmented temperature compensation approach,the low-temperature and high-temperature segments of the first-order bandgap reference voltage temperature curve are individually compensated,significantly reducing the temperature coefficient of the reference voltage.This results in a bandgap reference voltage output with low temperature coefficient and high precision.Simulation results show that,when the temperature varies from-40℃to 125℃,the temperature coefficient of the bandgap reference voltage is significantly reduced from 15.47×10-6 to 1.141×10-6 after applying the segmented temperature compensation,effectively improving temperature stability and voltage accuracy.

bandgap reference sourcesegmented temperature compensationlow-temperature coefficienthigh-precision

王宇飞、杨艳、刘威

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武汉大学物理科学与技术学院,湖北 武汉 430072

武汉大学微电子学院,湖北 武汉 430072

湖北珞珈实验室,湖北 武汉 430072

武汉量子技术研究院,湖北 武汉 430072

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带隙基准源 分段温度补偿 低温度系数 高精度

2025

电子设计工程
西安三才科技实业有限公司

电子设计工程

影响因子:0.333
ISSN:1674-6236
年,卷(期):2025.33(2)