室温下β-Ga2O3纳米柱的脆韧转变研究

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中文摘要：β-Ga2O3的力学性能关系到相关电子器件的制造、封装以及应用,然而目前关于β-Ga2O3单晶的力学变形机制研究还相对匮乏.本文研究了(100)β-Ga2O3单晶在压应力作用下的力学行为,发现其极易沿着(100)B面脆断,并计算得到该材料的断裂应力范围为314.1～615.1 MPa.进一步揭示了不同长径比、不同直径对β-Ga2O3纳米柱力学变形行为的影响,实验结果表明:当长径比＞2时,β-Ga2O3纳米柱在不同直径下均沿着(100)B面发生脆断;当长径比＜2且直径＜200 nm时,(100)β-Ga2O3发生脆性向塑性的转变,表现为先沿着(201)面发生滑移,之后沿着(100)B面断裂.最后,讨论了晶体学取向对于小尺寸β-Ga2O3塑性的影响,研究结果为理解β-Ga2O3的力学性能提供借鉴.

外文标题：Brittle-to-ductile transition of β-Ga2O3 nanopillars at room temperature

外文摘要：The fabrication,packaging,and application of β-Ga2O3-based devices is limited by their mechanical properties,while the basic understanding of the mechanical deformation mechanism of the(100)β-Ga2O3 is still lacking.Herein,we presented a systematic research on the mechanical behaviors of(100)β-Ga2O3 nanopillars.The nanopillars were fractured easily along the(100)B plane with a fracture stress from 314.1-615.1 MPa.Meanwhile,the effect of different aspect ratios and diameters on the deformation behavior was further discussed.The plasticity in the small-sized(100)β-Ga2O3 was also investigated.The result showed that β-Ga2O3 nanopillars exhibited a brittle fracture along the(100)B plane when the aspect ratio was larger than 2.In contrast,when the aspect ratio was lower than 2,the nanopillars(d＜200 nm)showed the brittle to ductile transition,as manifested by the initial slipping along the(201)plane and the fracture along the(100)B plane.Finally,the effect of the crystallographic orientation on the plasticity of small-sized nanopillars was discussed,which lays the foundation for the potential application of the extremely brittle β-Ga2O3 in nanodevices.

外文关键词：

β-Ga2O3brittle-to-ductile transitionmechanical deformation mechanismtransmission electron microscopy

作者：

李佩、赵培丽、胡捷、吴姗姗、黄瑞龙、王佳恒、郑赫、贾双凤、王建波

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作者单位：

武汉大学物理科学与技术学院,电子显微镜中心,人工微结构教育部重点实验室和高等研究院,湖北武汉 430072

武汉大学科研公共服务条件平台,湖北武汉 430072

关键词：

β-Ga2O3 脆韧转变力学研究透射电子显微镜

基金：

国家自然科学基金资助项目国家自然科学基金资助项目国家自然科学基金资助项目国家自然科学基金资助项目湖北省青年拔尖人才计划中央高校基本科研业务费专项资金

项目编号：

123740145207123712074290521010212042023kf0172

出版年：

2024

DOI：

10.3969/j.issn.1000-6281.2024.01.002

电子显微学报

中国物理学会

电子显微学报

CSTPCD北大核心

影响因子：0.431

ISSN：1000-6281

年,卷(期)：2024.43(1)

参考文献量34