Amorphous crystallization has been widely used as an effective method to produce crystalline materials.In recent years,metal induced crystallization(MIC)method has attracted researchers'interest.This work investigated the intrinsic effect of temperature on the diffusion behavior of metal catalysts and the structural changes of materials during the crystallization process under MIC mode.Metal Pt induced crystallization of amorphous silicon was studied.Transmission electron microscopy combined with in-situ thermal research method was used to directly observe the crystallization process of amorphous silicon under MIC mode at the atomic scale.The result showed that silicide Pt2Si and other compounds were produced on the Pt/Si interface at 550 ℃,resultsing in obvious structural changes at the interface.When the temperature was kept at 650 ℃,Pt diffused in the form of particle movement.Significant geometric changes occurred during the diffusion process.The different diffusion rates of Pt and amorphous silicon led to the appearance of Kirkendall pores at the interface,which hindered the further diffusion of the two materials at the interface.When the temperature was elevated to 700 ℃,amorphous silicon underwent crystallization,and Pt promoted the crystallization of amorphous silicon during this process.
关键词
透射电镜/原位/MIC/非晶硅
Key words
transmission electron microscopy/in situ/MIC/amorphous silicon
维普
万方数据