In-situ TEM study of interface effect on polarization switching mechanism in BFO ferroelectric thin film
Ferroelectric thin films have promising applications in micro-functional devices such as high-density memory.Studying the polarization switching behavior of ferroelectric thin films under an external field is of great significance.In this paper,the dynamic behavior of ferroelectric polarization reversal and interface factors of BFO thin film capacitor were investigated using in-situ TEM.The In-situ result revealed two types of ferroelectric polarization switching modes:"In-plane layer-like"and typical"nucleation growth".The result from HAADF high-resolution and Gaussian fitting analysis demonstrated that the geometric configuration of the interface played a crucial role.Variations in the geometric curvature of the interface led to different degrees of local charge aggregation,which in turn affected the local built-in electric field and nucleation barrier,resulting in distinct ferroelectric polarization reversal behaviors.This study provides new insights and references for the regulation of ferroelectric nucleation and switching mode,as well as interface design in devices.
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