Effect of lattice changes on electrical properties of TSV array during thermal cycling
In order to solve the problem of poor thermo-mechanical reliability of TSV(Through silicon via)and clarify the influence of its structural characteristic changes on electrical properties,the thermal cycling tests were carried out on the samples based on TSV array interdigital electrode at-55-125℃.The changes of the electrical properties and boundary insulation properties of the array electrode after thermal cycling were measured,and the geometric changes of TSV copper columns were tracked.The morphology and lattice characteristics of TSV structure before and after the test were compared and analyzed.The results show that temperature cyclic loading leads to TSV-Cu grain growth,copper column volume enlargement,microstructure defects generation and electrical properties degradation.In addition,the relationship of the influence of the lattice characteristics on the electrical properties of TSV array electrodes was constructed quantitatively,which has substantial engineering significance.
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维普
