To reduce hole accumulation and electromagnetic interference(EMI)noise in floating P-base IGBT structure,a FD-IGBT structure was proposed with poly barrier layer,which improved the trade-off relationship between the EMI and turn-on loss(Eon).The new structure has a poly barrier layer connected to the gate over the floating P-base,which results in a potential difference between the poly barrier layer and the drift region.The holes can be accumulated under the poly barrier layer at the turn-on state,which decreases accumulated holes near the gate and the reverse charge current from the floating P-base to the gate.Compared with conventional FD-IGBT,the simulation results by TCAD software show that the peak overshoot current(ICE)and overshoot voltage(VGE)for the new FD-IGBT structure are reduced by 26.5％and 8.6％,respectively.Moreover,better controllability on current and voltage is improved at higher gate resistance(Rg).For the same turn-on loss,the maximum values of dICE/dt,dVCE/dt and dVKA/dt of the new FD-IGBT are reduced by 26.5％,15.1％and 26.1％,respectively.
关键词
电磁干扰噪声/开启损耗/浮空P区/多晶硅阻挡层/栅极反向充电电流
Key words
electromagnetic interference noise/turn-on energy losses/floating P-base/poly barrier layer/gate reverse charge current
维普
万方数据