首页|电解液温度对Ta2O5阳极氧化膜结构和性能的影响

电解液温度对Ta2O5阳极氧化膜结构和性能的影响

扫码查看
磷酸电解液中,采用阳极氧化法在高纯钽箔表面制备Ta2O5阳极氧化膜,通过椭圆偏振光谱仪、X射线衍射仪、X射线光电子能谱和电化学测试等,研究了电解液温度对Ta2O5阳极氧化膜结构、化学组成、介电性能和绝缘性能的影响.结果表明,Ta2O5阳极氧化膜中结合有少量的电解液阴离子,且结合的阴离子含量和分布深度随电解液温度升高而降低;Ta2O5阳极氧化膜介电常数和绝缘强度随电解液温度升高而增大,但过高的温度会促进非晶态Ta2O5晶化从而导致氧化膜性能劣化.当电解液温度从25 ℃升高至85 ℃时,氧化膜介电常数增大约3.5%,耐击穿电压提高约1%,膜中结合态阴离子的分布深度从氧化膜厚度的约1/2降低至约1/4.基于实验结果,钽在磷酸电解液中的最佳阳极氧化温度是85 ℃.
Effect of electrolyte temperature on the structure and properties of Ta2O5 anodic oxide film
Ta2O5 anodic oxide film was prepared on the surface of high-purity tantalum foil by anodic oxidation in phosphoric acid electrolyte.And the effects of electrolyte temperature were investigated,which could greatly affect the structure,chemical composition,dielectric properties and insulating properties of the Ta2O5 anodic oxide film.The investigation was performed by elliptical polarization spectroscopy,X-ray diffractometry,X-ray photoelectron spectroscopy,and electrochemical tests.The results show that some electrolyte anions are bound in the Ta2O5 anodic oxide film,and the content and depth distribution of the bound anions decrease at higher electrolyte temperature.The dielectric constant and strength of the Ta2O5 anodic oxide film increase at higher electrolyte temperature.However,high temperature promotes crystallization of amorphous Ta2O5 and leads to the deterioration of the oxide film performance.When the electrolyte temperature is increased from 25 ℃ to 85 ℃,the oxide film dielectric constant increases by about 3.5%,and the breakdown voltage increases by about 1%,and the depth of distribution of bound anions in the film decreases from~1/2 to~1/4 of the oxide film thickness.Based on the experimental results,the optimum anodic oxidation temperature of tantalum in phosphoric acid electrolyte is 85 ℃.

Ta2O5anodic oxidation methodelectrolyte temperaturechemical compositiondielectric properties

田超、王凤华、郑传江、刘开文

展开 >

中国振华(集团)新云电子元器件有限责任公司,贵州贵阳 550018

Ta2O5 阳极氧化法 电解液温度 化学组成 介电性能

2024

电子元件与材料
中国电子学会 中国电子元件行业协会 国营第715厂(成都宏明电子股份有限公司)

电子元件与材料

CSTPCD北大核心
影响因子:0.491
ISSN:1001-2028
年,卷(期):2024.43(2)
  • 32