Decoupling of gate bias and reverse conduction of GaN HEMT
The reverse conduction capability of wide bandgap Gallium Nitride High Electron Mobility Transistors ( GaN HEMTs) are governed by the gate bias, which limits the practical development of the devices in scenarios such as bidirectional DC/DC converters. With the source-control p-GaN region structure, part of the heterojunction conductive channels were dominated by the source, the decoupling of the reverse conduction voltage and the gate bias voltage was realized, and the degradation of the reverse conduction capability of the device under negative gate bias was effectively suppressed. The results show that when the ratio of the metal width above the p-GaN layer is 1 ∶ 1, it is beneficial to realize the best trade-off between forward and reverse conduction performance. At temperature of 150℃, the GaN HEMT with the new structural design sustains good reverse conduction capabilities. Double-pulse dynamic switching tests show that the device has fast switching capabilities. The device process is simple and compatible with the existing GaN HEMT process flow, and is expected to promote the practical development of GaN device technology in the converter applications.
GaN HEMTreverse conduction capabilitygate bias voltagedouble pulse switchingbidirectional converter
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维普
