A switchable frequency selective rasorber design based on PIN diode
A switchable frequency selective rasorber structure based on lumped resistors and PIN diodes was designed and verified to achieve wideband transmission and switchable passband characteristics. The metamaterial unit structure was consisted of an interdigital resonator that connected to lumped resistors, a bandpass frequency selective surface layer, and a switchable control layer loaded with PIN diodes. The relationship between the unit structure and resonant frequency was analyzed using equivalent circuit theory. The absorbing mechanism was revealed through analysis of the surface current and electric field distribution in the unit structure. The results demonstrate that when the PIN diodes are in the on state, the designed structure exhibits an insertion loss below 1 dB within the frequency range of 9. 48-10. 31 GHz. Moreover, an absorption rate of over 90％ in the frequency ranges of 5. 34-8. 08 GHz and 11. 89-15. 14 GHz can be achieved. The overall reflection coefficient remains below -10 dB within the frequency range of 5. 21-15. 37 GHz. Conversely, when the PIN diodes are in the off state, the original passband transforms into a fully reflective band, with a reflection coefficient over -1 dB. The design has great potential for application in the field of stealth.
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