NO2 is one of the most common pollutants in the vehicle exhaust and industrial emissions,whose detection is of great significance for the environment and human health.The intelligent trend of the industrial production and everyday life has put forward high requirements for sensors in terms of performance,miniaturization and integration.As an important electrical device structure,field effect transistors(FETs)have great advantages in the miniaturization and integration of the devices due to its compatibility with MEMS process.Therefore,it is of great research value to develop high-performance MOSFET NO2 sensor based on new structures.In this work,tellurium nanoribbon channel material was synthesized by hydrothermal method,the microstructure characterizations were applied to confirm the strip morphology and single crystal structure of the material.Based on this,the tellurium-based FET was prepared.In order to further improve the response characteristics of the device,Au modification was applied to the channel area,and the gas sensing characteristics of the device before and after the modification were compared.After Au modification,the response and recovery rate of the device was accelerated,the baseline drift was improved,and the detection limit was broadened to 100 ppb,indicating good selectivity and repeatability of the device.The gas sensing mechanism was analyzed from the perspectives of the carrier migration,metal-semiconductor contact,superfacial area as well as chemisorbed oxygen,and the sensing mechanism of tellurium-based FET NO2 sensor was established.Our work provides an effective strategy for the design,fabrication and sensitization of the MOSFET tube toxic and harmful gas sensors.
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