The third generation semiconductor material α-Ga2O3 has advantages in manufacturing high-power and other electronic devices due to its ultra-wide band gap(5.3 eV)and ultra-high Baliga figure of merit(6726).Among various methods for growing α-Ga2O3 thin films,Mist CVD simplifies precursor transport,making it a promising growth technique for the metastable phase thin films.Due to the limitation of early droplet distributions on the quality of the film,transient numerical simulations of multiphase flow reactions in the horizontal hot wall α-Ga2O3 miss CVD system were conducted with computational fluid dynamics(CFD).Based on the model of the droplet migrations and gasification,the factors affecting droplet evaporation time were studied,and the effect of the droplet migration length on the initial epitaxial quality and average growth rate of thin films was disclosed.Among many variables that affect the α-Ga2O3 thin film growth distribution,the key parameters such as substrate temperatures,substrate positions,and substrate angles were optimized.The results indicate that parameters like the substrate angle of 26.5°,the substrate position of 78 cm away from the outlet,and substrate temperature of 550 ℃ lead to good droplet migrations and distributions,which are the optimized conditions for thin films nucleation and growth.This work provides growth parameters for the actual growth and preparation.
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