Performance of solar-blind photodetector based on β-Ga2O3/NiO heterojunction
Solar-blind photodetectors based on β-Ga2O3/NiO heterojunction structure were prepared by depositing gallium oxide(Ga2O3)films with a thickness of 60 nm on the silicon oxide substrates using atomic layer deposition(ALD).The effects of electrode spacing(d),film annealing temperature,and Ohmic annealing temperature of the devices on the photoelectric properties were investigated.The results show that the photocurrent(Iphoto),dark current(Idark),photoresponsivity(R),external quantum efficiency(EQE),and specific detectivity(D*)of the device increase as d is reduced from 30 μm to 10 μm.The less rise time(τr)and decay time(τd)are also observed.The Iphoto,Idark,R,EQE,and D*of the devices increase and τ r,τ d decrease when the annealing temperature of the films is increased from 500 ℃ to 900 ℃.The Iphoto,Idark,R and EQE increase and τ r,τ d decrease when the Ohmic annealing temperature increases from 350℃ to 550 ℃.The photoelectric property of the device is optimal at d of 10 μm,film annealing temperature of 900 ℃ and Ohmic annealing temperature of 550 ℃,which corresponds to photo-to-dark current ratio(PDCR)of 1802.63 at a bias voltage of 10 V,R of 5.27×102 A/W,EQE of 257587.76％and D*of 5.45 × 1013 Jones.
β-Ga2O3atomic layer depositionNiOheterojunctionphotodetectorannealing temperature
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