首页|HFO2铁电体薄膜移相器设计

HFO2铁电体薄膜移相器设计

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移相器作为阵列天线的关键部件,用来调整阵列天线中各个天线单元之间的相位差,从而实现波束的扫描.基于传输线周期性加载可变电容理论,设计了一款工作于K波段的HFO2 铁电薄膜移相器.为了实现低插损和紧凑型,该移相器采用HFO2铁电体薄膜材料,相比传统的BST材料,其有着更大的调谐率、厚度更薄且损耗角正切更低,容易集成,同时结合共面波导叉指电容结构设计,该移相器有非常紧凑的尺寸.通过改变HFO2 铁电材料的介电常数从而实现电容的变化,进而实现相位的调控.仿真结果表明,通过加入直流偏置电压改变铁电体薄膜的介电常数,该移相器在 22 GHz频点的移相量为 80°,最大插损为-2.5 dB,回波损耗优于-10 dB.
Design of HFO2 ferroelectric thin-film phase shifter
The phase shifter as the key component of the array antenna is usually utilized to control the phase difference between the antenna elements in order to achieve beam scanning.A K-band HFO2 ferroelectric thin film phase shifter was designed based on the theory of transmission line periodically loading a variable capacitor.In order to achieve a compact phase shifter with low insertion loss,a coplanar waveguide interdigital capacitor structure was adopted.In comparison with traditional BST,the HFO2 ferroelectric material affer advantages such as larger tuning rate,thinner thickness,lower loss tangent,and easier integration.By altering the dielectric constant of the HFO2 material,and phase change can be achieved.The resulting phase shifter has a very compact size.Simulation results show that the dielectric constant of ferroelectric thin film can be changed by applying DC bias voltage.The phase shift of the phase shifter at 22 GHz is 80°,the maximum insertion loss is-2.5 dB,and the return loss is better than-10 dB.

coplanar waveguidesferroelectric thin filmsphase shifterpermittivityinterdigital capacitors

李江、常明超、张义、李兴、赵其祥

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中国空间技术研究院,北京 100094

桂林电子科技大学 信息与通信学院,广西 桂林 541004

广州天极电子科技股份有限公司,广东 广州 511453

共面波导 铁电薄膜 移相器 介电常数 叉指电容

国家自然科学基金地区项目

62361019

2024

电子元件与材料
中国电子学会 中国电子元件行业协会 国营第715厂(成都宏明电子股份有限公司)

电子元件与材料

CSTPCD北大核心
影响因子:0.491
ISSN:1001-2028
年,卷(期):2024.43(6)
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