高均匀性1×128 SiC紫外雪崩光电二极管探测阵列
High uniformity 1×128 SiC ultraviolet avalanche photodiode detection array
李红旭 1苏琳琳 1杨成东1
作者信息
- 1. 无锡学院电子信息工程学院,江苏无锡 214105
- 折叠
摘要
主要研究了SiC雪崩光电二极管(APD)阵列对微弱紫外光的探测均匀性问题,设计并制备了1×128 SiC APD探测阵列,通过表征各像素点的电流-电压曲线,提取出APD阵列的击穿电压波动在±0.1 V;通过被动淬灭电路表征各像素点的微弱紫外光探测能力,提取出APD阵列的暗计数率波动在±0.5 Hz/μm2,单光子探测效率波动在±0.4％,良率达到91％,结果表明本工作设计的SiC APD探测阵列能够为微弱紫外光成像技术提供可行的技术方案.
Abstract
Here we designed and prepared a 1 × 128 linear array of SiC avalanche photodiode(APD),which was then further assessed for its detection uniformity of weak ultraviolet light.The results show that the breakdown voltage extracted from current-voltage curve fluctuates only±0.1 V.To characterize its detection behaviors,we used a specific passive quenching circuit to reveal its photon-level detection features.The detection behaviors show high uniformity with small fluctuation of dark count rate of±0.5 Hz/μm2 and single photon detection efficiency of±0.4％.These results demonstrate that prepared SiC APD array structure can provide a feasible solution for ultraweak ultraviolet imaging technology.
关键词
雪崩光电二极管/SiC/探测阵列/高均匀性/良率Key words
avalanche photodiode/SiC/detection array/high uniformity/yield引用本文复制引用
基金项目
国家自然科学基金(62106111)
江苏省高等学校基础科学(自然科学)研究项目(22KJB510043)
无锡市科技创新创业资金"太湖之光"科技攻关计划(K20231001)
无锡学院引进人才科研启动项目(550222001)
无锡学院引进人才科研启动项目(2021r011)
无锡学院引进人才科研启动项目(2021r012)
出版年
2024
国家科技期刊平台
NSTL
万方数据