Dielectric properties of CaCu3Ti4O12 ceramics co-doped with Ni2O3 and ZrO2
CaCu3Ti4O12(CCTO)dielectric ceramics have attracted widespread attention and research interest owing to their extremely high dielectric constant(ε'),which shows significant potential in the capacitor materials field.However,the development has been hampered by the elevated dielectric loss(tanδ)and inadequate temperature stability of it.In order to mitigate tanδ and enhance temperature stability of the ceramics,CCTO ceramics co-doped with Ni2 O3 and ZrO2 were synthesized via sol-gel method.The investigation reveals that,with the doping of Ni2O3 and ZrO2,high ε'of the ceramic is maintained,while the temperature stability is substantially improved and tanδ is reduced.It should be noted that the samples co-doped with 1％Ni2O3 and 1％ZrO2 exhibits an ε'as high as 4710,with variations within±20％across the temperature range from-125 to 200 ℃,which conforms to the standards of X9S capacitors(△ε'＜±20％)within the range from-55 to 200 ℃.Furthermore,the tanδ of this sample at room temperature is lower than that of pure CCTO(0.012 compared to 0.025).These outstanding performances are closely associated with the increased grain boundary activation energy and grain boundary resistance.
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