A high linear RF power amplifier with the improved IMD3
A 2.4 GHz radio frequency power amplifier(RF PA)was successfully designed with high linearity and efficiency using a 2 μm gallium arsenide heterojunction bipolar transistor(GaAs HBT)technology.To address the third-order intermodulation distortion(IMD3)caused by nonlinear effect,a two-stage amplifier circuit structure was adopted.By optimizing the bypass circuits in the two-stage bias network,two cancelable third-order intermodulation components were obtained,and the IMD3 of the power amplifier was effectively improved.Under continuous single-tone signal testing,it shows that the power amplifier achieves a 1 dB compression point power(P1dB)of 33.3 dBm,a power-added efficiency(PAE)of 58％at 33.3 dBm,and a gain of 30.8 dB.Additionally,with a tone spacing of 1 MHz,the measured IMD3 is below-50 dBc at 20 dBm,and the maximum third-order output intercept point(OIP3)is 47 dBm at 23.8 dBm.
third order intermodulation distortionradio frequency power amplifierhigh linearityheterojunction bipolar transistor
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