摘要
非晶硅薄膜晶化微观组织调控是实现微电子器件性能提升的关键.比较分析了辅助外场、界面调控、掺杂调控和工艺参数等非晶硅薄膜晶化微观组织调控技术方法,重点阐述了辅助外场的大小、方向以及作用时间等对晶体硅生长方向和速率的影响.此外,详细分析了界面层成分、厚度、结构等引起的晶化硅薄膜微观组织结构差异以及掺杂浓度、衬底类型等对非晶硅薄膜晶化微观组织的影响.结果有助于深入理解非晶硅薄膜晶化机理,进而有益于优化晶化硅薄膜制备工艺和器件性能提升.
Abstract
The microstructure control of amorphous silicon thin films is critical to improve the performance of microelectronic devices. Here the control methods are compared and analyzed,including variations of auxiliary external field,introduction interface,doping and process parameters. The effects of the magnitude,direction and time of the auxiliary external field are mainly discussed on the growth direction and rate of crystalline silicon. In addition,the effects of the composition,thickness and structure of the interfacial layer,doping concentration and substrate type were analyzed in detail on the microstructure of the amorphous silicon thin films. The results are helpful to further understand the crystallization mechanism of the amorphous silicon thin films,which is beneficial to optimize the preparation process of crystalline silicon thin films and improve the performance of relative devices.
维普
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