Design of combinational logic circuit using multi-terminal memristor
Micro memristors provide new opportunities for the development of neural networks in the brain. Simple and precise memristors could enhance the performance of diverse neural networks and arithmetic circuits. Based on the traditional two-terminal memristor model,a multi-terminal memristor was designed by introducing a control port,which makes it more flexible and practical in circuit design and application. The resistance of the multi-terminal memristor has three parts,namely,the metal region,the low-resistance region,and the high-resistance region. Considering that,a three-segmented piecewise linear method was employed to accurately fit these three regions. By deducing the formula and explaining principle of the memristor,the model of the memristor was established,and the hysteresis curve and logic circuit was tested for the obtained circuit to ensure its correctness. The simulation results show that the constructed multi-terminal memristor can generate hysteresis curves that conform to memristor characteristics and realize combinational logic circuit functions. Since the constructed memristor circuit in this study is only composed of MOS tubes,the number of components used in the circuit is reduced by 63.9% compared to the conventional memristor logic circuits.