Development of compound semiconductor materials at terahertz wave band
Following microwave and millimeter wave technologies,terahertz(THz)wave technology has been proven to have important application prospects in the next generation of detection and communication fields.As the mainstream substrate material for the microwave and millimeter wave chips,Ⅲ-Ⅴ compound semiconductor materials becomes the research hotspot in THz monolithic integrated circuit(TMIC)material science.In this article,the recent research,and application progress of compound semiconductor materials represented by Gallium Arsenide(GaAs),Indium Phosphide(InP),and Gallium Nitride(GaN)in the field of TMIC manufacturing are introduced,and the current situation and future development trends are analyzed domestically and internationally.
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