Optimization of electrical properties of Bi4Ti2.95W0.05O12 ceramics by modulation of lattice distortion with Ce4+doping
High-temperature lead-free piezoelectric ceramics of Bi4Ti2.95W0.05O12-x％CeO2(x=0,0.02,0.05)were prepared using the conventional solid-state method.The effects of the modulating the degree of ceramic lattice distortion by varying the amount of Ce4+doping on the microstructure and the piezoelectric and dielectric properties of the ceramics were systematically investigated.The XRD and SEM results showed that an appropriate amount of Ce4+doping induced a suitable degree of lattice distortion in the piezoelectric ceramics,thereby their piezoelectric and dielectric properties were enhanced and dielectric loss was reduced.Notably,at a doping level of x=0.02,the sample exhibited optimal performance,with a d33 of 8 pC/N,Tc of 618 ℃,tanδ of 0.09％,and Qm of 3364.These results strongly suggest that this material has significant potential for high-level sensing applications.
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