电子元件与材料2024,Vol.43Issue(10) :1214-1220.DOI:10.14106/j.cnki.1001-2028.2024.0299

Ce4+掺杂调节晶格畸变优化Bi4Ti2.95W0.05O12陶瓷的电学性能

Optimization of electrical properties of Bi4Ti2.95W0.05O12 ceramics by modulation of lattice distortion with Ce4+doping

强晓永 刘天天 陈涛 陈阳 王松林
电子元件与材料2024,Vol.43Issue(10) :1214-1220.DOI:10.14106/j.cnki.1001-2028.2024.0299

Ce4+掺杂调节晶格畸变优化Bi4Ti2.95W0.05O12陶瓷的电学性能

Optimization of electrical properties of Bi4Ti2.95W0.05O12 ceramics by modulation of lattice distortion with Ce4+doping

强晓永 1刘天天 1陈涛 1陈阳 1王松林1
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作者信息

  • 1. 天津科技大学电子信息与自动化学院,天津 300222
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摘要

采用固相反应法成功制备了 Bi4Ti2.95W0.05O12-x%CeO2(掺杂量x=0,0.02,0.05)高温无铅压电陶瓷.研究发现Ce4+掺杂量的变化对陶瓷晶格畸变程度具有调节作用.系统地研究了这种调节作用对陶瓷微观形貌、压电性能和介电性能的影响.XRD和扫描电镜测试结果表明,适量的Ce4+掺杂能有效地在压电陶瓷内部引发适度的晶格畸变,进而改善了陶瓷的压电和介电性能,同时降低了介电损耗.当掺杂量x为0.02时,样品展现出最佳性能:d33=8 pC/N,Tc=618 ℃,tanδ=0.09%,Qm=3364.

Abstract

High-temperature lead-free piezoelectric ceramics of Bi4Ti2.95W0.05O12-x%CeO2(x=0,0.02,0.05)were prepared using the conventional solid-state method.The effects of the modulating the degree of ceramic lattice distortion by varying the amount of Ce4+doping on the microstructure and the piezoelectric and dielectric properties of the ceramics were systematically investigated.The XRD and SEM results showed that an appropriate amount of Ce4+doping induced a suitable degree of lattice distortion in the piezoelectric ceramics,thereby their piezoelectric and dielectric properties were enhanced and dielectric loss was reduced.Notably,at a doping level of x=0.02,the sample exhibited optimal performance,with a d33 of 8 pC/N,Tc of 618 ℃,tanδ of 0.09%,and Qm of 3364.These results strongly suggest that this material has significant potential for high-level sensing applications.

关键词

压电陶瓷/掺杂/晶格畸变/电学性能/微观结构

Key words

piezoelectric ceramics/doping/lattice distortion/electrical properties/microstructure

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出版年

2024
电子元件与材料
中国电子学会 中国电子元件行业协会 国营第715厂(成都宏明电子股份有限公司)

电子元件与材料

CSTPCD北大核心
影响因子:0.491
ISSN:1001-2028
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