首页|Dy2O3掺杂抗还原纳米BaTiO3基陶瓷性能研究

Dy2O3掺杂抗还原纳米BaTiO3基陶瓷性能研究

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采用传统固相合成法制备了 BaTiO3-SrCO3-MgCO3-Mn3O4-xDy2O3-ZrO2-SiO2陶瓷,其中x的取值范围为摩尔分数0~0.8%.该系列陶瓷以1320 ℃的温度在1%H2+99%N2混合还原气氛中烧结.系统研究了 Dy2O3掺杂对纳米BaTiO3基陶瓷的晶格变化、晶粒生长和介电性能的影响.结果表明,掺杂适量的Dy2O3有助于提升BaTiO3陶瓷材料的介电常数、绝缘电阻率以及Tc峰值.最终,掺杂摩尔分数0.2%Dy2O3的BaTiO3陶瓷样品表现出了高介电常数(εr=2914)、良好的绝缘电阻率(ρv=1.94×1011Ω·cm)和低介质损耗(tanδ=0.7%),且其温度特性符合EIA X7R标准(-55-125 ℃,ΔC/C25℃≤±15%),表现出作为纳米BaTiO3基电容器陶瓷材料的良好应用潜力.
Characteristics of Dy2O3-doped non-reducible nano BaTiO3-based ceramics
BaTiO3-SrCO3-MgCO3-Mn3O4-xDy2O3-ZrO2-SiO2 ceramics were prepared by traditional solid phase synthesis method,where the value of x ranges from 0 to 0.8%(mole fraction).This series of ceramics was sintered at 1320 ℃ in the 1%H2+99%N2 mixed reducing atmosphere.The effect of Dy2O3 doping on the lattice change,grain growth and dielectric properties of nano-BaTiO3-based ceramics was systematically studied.The results show that doping with an appropriate amount of Dy2O3 helps to improve the dielectric constant,insulation resistivity and Tc peak of BaTiO3 ceramic materials.Finally,the BaTiO3 ceramic sample doped with 0.2%Dy2O3 exhibits a high dielectric constant(e,=2914),good insulation resistivity(ρv=1.94×1011Ω·cm)and low dielectric loss(tanδ=0.7%),and its temperature characteristics meets the EIA X7R standard(-55-125 ℃,ΔC/C25℃ ≤±15%),showing good application potential as a nano-BaTiO3-based capacitor ceramic material.

nano-barium titanatenon-reducibleDy2O3high dielectric constanttemperature stability

罗世勇、赵俊斌、蓝小林、周沫柯、唐斌

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广东南方宏明电子科技股份有限公司,广东东莞 523216

西华大学高性能科学计算重点实验室,四川成都 610039

电子科技大学集成电路科学与工程学院,四川成都 611731

纳米钛酸钡 抗还原 Dy2O3 高介电常数 温度稳定性

2024

电子元件与材料
中国电子学会 中国电子元件行业协会 国营第715厂(成都宏明电子股份有限公司)

电子元件与材料

CSTPCD北大核心
影响因子:0.491
ISSN:1001-2028
年,卷(期):2024.43(10)