Design of SiC MOSFET low-power multi-resonant drive circuit
In order to solve the problem of high power loss of silicon carbide metal-oxide-semiconductor field-effect transistor(SiC MOSFET)and optimize its switching performance,a multi-resonant gate drive circuit was proposed.Utilizing the idea of energy feedback,the drive circuit employed a multi-resonant filter network to perform higher-order harmonic filtering and recover the energy in the input capacitor.In order to prevent the drive circuit from obtaining energy from the power supply,as well as avoid the problem of false triggering,and increase switching speed of SiC MOSFET,the gate source voltage was clamped under the expected voltage of+15 V and-5 V by controlling the on-off of the transistor.LTspice simulation results show that compared with conventional gate drive circuit and other common resonant gate drive circuits,the power loss of the proposed multi-resonant gate drive circuit is reduced by 50％and 30％,respectively,and the switching speed of SiC MOSFET is increased.The proposed drive circuit has certain practical value and is beneficial to the development of the power electronics industry.
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维普
