Simulation of insulated gate bipolar transistor annealed by non-melting pulsed laser
In semiconductor processing,rapid thermal annealing(RTA)technology is one of the effective ways to improve the electrical performance of Insulated Gate Bipolar Transistors(IGBTs).However,it can result in severe impurity redistribution,incomplete lattice recovery,and decreased mechanical performance.To address these problems,the effects of laser wavelengths(193,248,308,and 532 nm)on the temperature distribution,impurity concentration,junction depth,and electrical performance of the IGBT under a non-melting pulsed laser annealing process were investigated.Compared to the RTA process,the impurity of the IGBT is more uniformly distributed after the non-melting pulsed laser annealing,and the junction depth and electrical performance are significantly optimized.The performance enhancement of the IGBT is the most significant when annealed using a 193 nm short-wavelength pulsed laser.The saturated collector current is increased by 10.99％,and the forward voltage drop and junction depth are reduced by 4.05％and 12.26％,respectively.The results indicate that among all wavelengths,the 193 nm short-wavelength pulsed laser is the most optimal choice for fabricating ultra-shallow junctions for the IGBTs.This study provides technical support for the laser annealing of the IGBTs.
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