The miniaturization of volume and increasing capacitance of chipsolid electrolytic tantalum capacitors have promoted the application of high-specific-volume tantalum powder in tantalum capacitors with low-voltage and large-capacity.Ta2O5 dielectric film is regards as the"heart"of the tantalum capacitors,and the quality of the formation determines the stability and reliability of the capacitors.The forming temperature is one of the key parameters in the anodic oxidation process,which has a significant impact on the quality of Ta2O5 dielectric film.Using CAK45A-B-10 V/100 μF as the object,the effects of the forming temperature on Ta2O5 dielectric film were investigated,through DC leakage current(DCL),Ⅰ-Ⅴ characteristics,high-temperature stability,and 85 ℃-2000 h lifetime tests.The results showed that by increasing forming temperature from 65 ℃ to 85 ℃,the average leakage current was reduced by about 39％.The stability of high-temperature capacity and leakage current was enhanced.The lifetime test illustrated the decrease of DCL change rate from-17％to-60％.
维普
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