Effects of Process Parameters on the Properties of W-doped ITO Transparent Conductive Thin Films Prepared by RF Magnetron Sputtering
Indium-tin oxide(ITO)thin film is the most widely used transparent conductive oxide thin film by now,optical and electrical properties of ITO thin film is usually improved by doping other metal elements into it.In this study,a transparent conductive film of indium tin oxide doped with tungsten(ITO∶W)is prepared by radio frequency(RF)magnetron sputtering.The relationship between the crystal structure,surface morphology,film thickness,optical and electrical properties of ITO∶W thin films and each sputtering parameter is studied.When the sputtering power is greater than 40 W,the prepared ITO∶W thin films are polycrystalline films with cubic bixbyite structure,they have good crystallinity with a smooth and flat surface.Under the parameters of substrate temperature of 320 ℃,sputtering power of 80 W,sputtering time of 15 min,and working pressure of 0.6 Pa,the ITO∶W thin film with optimized electrical and optical performance is obtained,and its sheet resistance is 10.5 Ω/□,resistivity is 4.41 × 10-4 Ω·cm,corresponding to carrier concentration of 2.23 × 1020 cm-3,mobility of 27.3 cm2·V-1·s-1,and average transmittance of 90.97％in the visible light range(400-700 nm).Besides,electrical property of ITO∶W thin films can be affected by adjusting the substrate temperature to affect the state of oxygen.
indium-tin oxide thin filmtungsten dopingtransparent conductive oxideradio frequency magnetron sputtering
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