近空间升华工艺制备高晶化硒化亚锗光电薄膜及其在太阳能电池中的应用
Preparation of highly crystalline germanous selenide photoelectronic thin films by close-space sublimation process and its application in solar cells
周静 1贺伟兰 1杨盛文 1高莉 1曲鹏 2蔡永茂 3曹宇4
作者信息
- 1. 东北电力大学 化学工程学院,吉林 132012
- 2. 国网冀北电力有限公司承德供电公司,承德 067000
- 3. 东北电力大学 理学院,吉林 132012
- 4. 东北电力大学 电气工程学院,吉林 132012
- 折叠
摘要
硒化亚锗(GeSe)由于具有原材料储量丰富、绿色无毒、制备工艺简单和性质稳定等优势,近几年得到了广泛关注.采用近空间升华法制备了GeSe薄膜,对GeSe薄膜的结晶行为进行分析,并将其应用到器件结构为FTO/CdS/GeSe/聚(3-己基噻吩)(P3 HT)/C的太阳能电池中进行优化.首先,在蒸发步骤完成后引入退火工艺,能够有效促进GeSe薄膜晶化,使GeSe太阳能电池的光电转换效率(PCE)提高至 0.743%.随后,通过衬底温度调节GeSe薄膜的晶化特性,发现衬底温度的提高有利于GeSe薄膜的晶化,但当衬底温度在 300℃以上时,过高的温度会使GeSe从衬底上脱附,导致晶化程度下降,器件性能快速退化.在最佳的 280℃衬底温度下,GeSe薄膜具有最大的晶粒尺寸和最强的光吸收、最高的电子寿命(τ)和电导率(σ),获得了 2.130%的PCE,其中开路电压(VOC)为 0.299 V,短路电流密度(JSC)为 16.815 mA·cm-2,填充因子(FF)为42.137%.以上研究为高晶化GeSe太阳能电池的制备和优化提供了可行的技术路线.
Abstract
Germanous selenide(GeSe)has attracted extensive attention in recent years because of its abundant raw material reserves,green,non-toxic,simple preparation process and stable properties.GeSe thin films were prepared by close-space sublimation method.The crystallization behavior of GeSe thin films was analyzed and optimized for solar cells with FTO/CdS/GeSe/poly(3-hexylthiophene)(P3 HT)/C device structure.Firstly,the annealing process is introduced after the evaporation step,which can effectively promote the crystallization of GeSe thin film,so that the photoelectric conversion efficiency(PCE)of GeSe solar cells can be increased to 0.743%.Subsequently,by adjusting the crystallization characteristics of the GeSe film by the substrate temperature,it is found that the increase of the substrate temperature is conducive to the crystallization of the GeSe film,but when the substrate temperature is more than 300℃,the excessive temperature will make the GeSe desurbed from the substrate,resulting in a decrease in the degree of crystallization and rapid degradation of the device perform-ance.At the optimum substrate temperature of 280℃,GeSe films have the largest grain size and the strongest light absorption,the highest electron lifetime(τ)and the highest electrical conductivity(σ),and the PCE of 2.130%,where the open circuit voltage(VOC)is 0.299V,and the short circuit current density(JSC)is 16.815 mA·cm-2.The filling factor(FF)is 42.137%.The above research provides a feasible technical route for the preparation and optimization of high crystalline GeSe solar cells.
关键词
硒化亚锗/太阳能电池/晶化/衬底温度/退火Key words
GeSe/solar cells/crystallization/substrate temperature/annealing引用本文复制引用
基金项目
国家自然科学基金(52172185)
吉林省教育厅科学技术研究项目(JJKH20210084KJ)
吉林市科技创新发展计划(20230103006)
吉林省创新创业人才项目(2022QN15)
出版年
2024
NETL
NSTL
万方数据