一种应用于LDO的温度保护电路设计

A temperature protection circuit applied to LDO

龙泳希 李伙生 段志奎 于昕梅

一种应用于LDO的温度保护电路设计

A temperature protection circuit applied to LDO

龙泳希 1李伙生 1段志奎 1于昕梅1
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作者信息

  • 1. 佛山科学技术学院电子信息工程学院,广东佛山 528225
  • 折叠

摘要

温度保护电路是LDO芯片的重要组成部分,能够保证LDO及其负载电路工作在安全温度区间内,避免温度过高而导致芯片损坏.提出了一种应用于LDO的温度保护电路,使芯片工作温度过高时自动关闭供电通路.所提出的温度保护电路利用双极晶体管基极-发射极电压的温度特性,当温度过高时将比较器状态翻转,输出控制信号控制调整管的栅极电压.本电路采用SMIC 0.18 μm CMOS工艺进行电路设计并用Spectre软件进行仿真验证,结果显示本电路能够实现 130℃关断LDO,温度下降到 105℃重启LDO恢复工作,温度迟滞为 25℃,工艺角仿真结果显示该电路工艺稳定性良好.

Abstract

Temperature protection circuit is an essential part of LDO,ensuring LDO and its load circuit working in suitable temperature range,preventing circuit from breaking down due to overheat.This paper presents a temperature protection circuit applied to LDO,turning off the circuit when temperature is too high.Based on the temperature characteristic of base-emitter voltage of bipolar junction transistor(BJT),the temperature protection circuit invert the output of comparator generating control signal to adjust gate voltage of pass transistor while overheat.The proposed circuit is fabricated in 0.18μm CMOS process and experimentally verified by Spectre.Simulation results show that LDO is turned off when temperature is higher than 130℃and turned on when temperature is lower than 105℃.The temperature hysteresis is 25℃.The simulation results of process angle show that the temperature protection circuit is stable.

关键词

LDO芯片/温度保护/电路安全

Key words

LDO/temperature protection/circuit safety

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基金项目

广东普通高校重点实验室资助项目(2021KSYS008)

出版年

2024
佛山科学技术学院学报(自然科学版)
佛山科学技术学院

佛山科学技术学院学报(自然科学版)

影响因子:0.226
ISSN:1008-0171
参考文献量5
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