基于电阻补偿跨导放大器的忆阻电路
A memristors circuit based on resistance compensated transconductance amplifier
陈家辉 1段志奎1
作者信息
- 1. 佛山大学电子信息工程学院,广东佛山 528225
- 折叠
摘要
忆阻器具有独特的记忆特性和非线性特征,被广泛应用在非易失存储器、神经网络、非线性系统等领域.提出了一种集成忆阻电路,该电路采用运算跨导放大器和电容积分电路实现忆阻特性,其中运算跨导放大器采用补偿电阻提高带宽,实现扩展工作频率范围的目的.忆阻电路基于SMIC 180 nm CMOS工艺设计实现,采用0.9 V双供电电源,可完全集成于芯片中,最高工作频率可达到100 MHz,功耗仅为0.252 mW.
Abstract
Memristors have unique memory characteristics and nonlinear features,making them widely used in non-volatile memory,neural networks,nonlinear systems and other fields.This article proposes an integrated memristor circuit that uses an operational transconductance amplifier and capacitive integrating circuit to achieve memristive behavior.The operational transconductance amplifier uses compensation resistors to increase bandwidth and achieve the purpose of expanding the operating frequency range.The memristor circuit proposed in this article is designed based on SMIC's 180 nm CMOS process,using a 0.9 V dual power supply,and can be fully integrated into the chip.The maximum operating frequency can reach 100 MHz,with a power consumption of 0.252 mW.
关键词
集成忆阻电路/宽频率/跨导放大器Key words
integrated memristor circuit/wide frequency/transconductance amplifier引用本文复制引用
基金项目
广东省普通高校重点实验室资助项目(2021KSYS008)
出版年
2024
国家科技期刊平台
NSTL
万方数据