Genetic evolution of 16S rRNA in Escherichia coli induced by low-energy N+implantation
To further understand the role of low-energy N+implantation in the phylogenetic evolution and characterization of drug resistance in Escherichia coli(E.coli),this study used low-energy N+ion implantation to screen for drug resistant E.coli.The 16S rRNA gene sequences were obtained through de novo genome sequencing,and the drug resistance characteristics of mutant strains were assessed using the K-B method.Twenty-five drug-resistant strains were obtained by mutagenesis.The 16S rRNA in five mutant strains had a point mutation(A257C)or a gene deletion in C1,V1,V2,V6-V9,and C6-C9 regions,respectively.GC content increased and the mutation rate reached 0.4％-0.6％.The results indicate that low-energy N+ion implantation could trigger mutations and drive 16S rRNA gene evolution in E.coli.,which could accelerate development of antibiotic resistance in E.coli.
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