首页|中子辐照诱生锆钛酸铅厚膜界面缺陷

中子辐照诱生锆钛酸铅厚膜界面缺陷

扫码查看
采用中子对厚度为5 μm的锆钛酸铅(PZT)压电厚膜进行辐照,选择注量为0 cm-2、1011 cm-2、1012 cm-2、1013 cm-2.针对界面缺陷影响机制不清晰问题,应用深能级瞬态谱(DLTS)对样品的界面缺陷能级、浓度、俘获截面等关键性质进行了系统性表征.结果表明:1011 cm-2的中子辐照使PZT厚膜界面处缺陷激活能从0.9 eV增加到1.6 eV,是导致极化强度降低11.2%、介电常数下降以及漏电流增大的重要因素,且影响程度与辐照的注量呈正相关.该研究结果对于压电材料和器件在辐照环境应用有重要参考意义.
Neutron irradiation related interfacial defects in lead zirconate titanate thick film
In this paper,we focus on the neutron irradiation effect on lead zirconate titanate(PZT)piezoelectric thick film with a thickness of 5 μm.The selected fluxes are at relatively low fluxes,including 4 kinds of 0 cm-2,1011 cm-2,1012 cm-2,1013 cm-2.The key properties of the samples have been systematically characterized,especially the interface defect(energy level,concentration,and capture cross-section)using deep level transient spectroscopy(DLTS).It benefits the throughout understanding of the role of interface defects on the overall properties of PZT a lot.The results showed that neutron irradiation at 1011 cm-2 increased the activation energy of interface defects in the PZT thick film from 0.9 eV to 1.6 eV.This is a significant factor leading to an 11.2%reduction in polarization intensity,a decrease in dielectric constant,and an increase in leakage current.The degree of impact is positively correlated with the irradiation fluence.The results of this study have important reference significance for the application of piezoelectric materials and devices in irradiated environments.

PZT thick filmNeutron irradiationInterfacial defectsElectrical properties

彭茂洋、孟德超、傅正平

展开 >

中国工程物理研究院电子工程研究所微系统与太赫兹研究中心 绵阳 621999

中国科学技术大学纳米科学技术学院 苏州 215123

PZT厚膜 中子辐照 界面缺陷 电学性能

核国重开放课题

NPT2023KFY10

2024

辐射研究与辐射工艺学报
中国科学院上海应用物理研究所

辐射研究与辐射工艺学报

CSTPCD
影响因子:0.527
ISSN:1000-3436
年,卷(期):2024.42(5)