首页|化学电阻型气体传感器的新兴领域:多酸与介孔金属氧化物的结合

化学电阻型气体传感器的新兴领域:多酸与介孔金属氧化物的结合

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基于半导体金属氧化物(SMOs)制造具有高度选择性和能在低温下工作的气体传感器是一项颇具挑战性的任务,而这些传感器在医疗诊断、工业制造以及航空航天领域的航天器中具有广泛应用。本文深入探讨了化学电阻式气体传感的新兴领域,特别是多酸(POMs)与嵌段共聚物在自组装过程中构建有序介孔金属氧化物(MMOs)的协同作用,并强调了气体传感技术的最新进展。着重介绍了 POMs作为MMOs前驱体的角色,这些MMOs因其独特的物理化学性质而具有高灵敏度和选择性。综述了各种合成策略及其对传感器性能的影响,包括低温操作、高灵敏度以及对特定气体的选择性。还强调了纳米结构控制、杂原子掺杂以及贵金属催化剂整合在提升传感器性能方面的重要性。最后,提出了未来的研究方向,建议探索更广泛的可检测化合物范围,并将这些材料集成到实际应用装置中,以实现现实世界的应用。
Emerging horizons in chemiresistive gas sensing:when polyoxometalates meet mesoporous metal oxides
Creating gas sensors that are highly selective and function at low temperatures based on semicon-ductor metal oxides(SMOs)is considered a difficult endeavor,and these sensors are extensively applied in medical diagnosis,industrial manufacturing,and in spacecraft within the aerospace sector.This review ar-ticle delves into the emerging horizons of chemiresistive gas sensing,particularly focusing on the synergy between polyoxometalates(POMs)and block copolymers in self-assembly for the construction of ordered mesoporous metal oxides(MMOs).It highlights the advancements in gas sensing technology,emphasi-zing the role of POMs as precursors for MMOs,which offer high sensitivity and selectivity due to their u-nique physicochemical properties.The review covers various synthetic strategies and their impact on sen-sor performance,including low-temperature operation,high sensitivity,and selectivity towards specific gases.It also underscores the importance of nanostructure control,heteroatom doping,and the integration of noble metal catalysts in enhancing sensor capabilities.The article concludes with future research direc-tions,suggesting the exploration of a broader range of detectable compounds and the integration of these materials into practical devices for real-world applications.

chemiresistive gas sensorssemiconductor metal oxidesPOMsMMOs

滕莹敏、谭华桥、赵钊、李阳光

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东北师范大学物理学院,吉林长春 130024

东北师范大学多酸与网格材料化学教育部重点实验室,吉林长春 130024

化学电阻式气体传感器 半导体金属氧化物 多金属氧酸盐 有序介孔金属氧化物

2024

分子科学学报
中国化学会

分子科学学报

CSTPCD
影响因子:0.434
ISSN:1000-9035
年,卷(期):2024.40(5)