On the Modelling of Thermal Boundary Resistance in Semiconductor Heterostructures
An effective thermal boundary resistance model of heterostructures is proposed in this study,which considers the coupling effect of phonon interface transmission and scattering,phonon scattering inside the transition layer,and residual stress in the transition layer.Based on the model,the effective thermal boundary resistance of two typical GaN/AlN/Si semiconductor heterostructures is calculated,and predictions of the model are in good agreement with the experimental results.Ac-cording to the model predictions,the phonon scattering mechanism that dominates the effective thermal boundary resistance under different transition layer thicknesses and temperatures is ana-lyzed.The results show that the phonon-grain boundary scattering inside the transition layer plays a dominant role,and the residual stress in the transition layer also has a significant effect on the thermal boundary resistance of heterostructures.
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