半导体异质结的界面热阻模型研究
On the Modelling of Thermal Boundary Resistance in Semiconductor Heterostructures
杨光 1曹炳阳1
作者信息
- 1. 清华大学工程力学系,热科学与动力工程教育部重点实验室,北京 100084
- 折叠
摘要
本研究提出了一种考虑声子界面透射与散射、过渡层内部声子散射,以及过渡层残余应力耦合作用的异质结等效界面热阻模型.基于该模型计算了两种典型GaN/AlN/Si半导体异质结样品的等效界面热阻,在所研究的温度下模型预测值与实验结果符合良好.根据模型预测结果,分析了不同过渡层厚度与温度下,主导等效界面热阻的声子散射机制.结果表明,过渡层内部的声子-晶界散射起主导作用,同时过渡层内的残余应力也会对等效界面热阻产生显著影响.
Abstract
An effective thermal boundary resistance model of heterostructures is proposed in this study,which considers the coupling effect of phonon interface transmission and scattering,phonon scattering inside the transition layer,and residual stress in the transition layer.Based on the model,the effective thermal boundary resistance of two typical GaN/AlN/Si semiconductor heterostructures is calculated,and predictions of the model are in good agreement with the experimental results.Ac-cording to the model predictions,the phonon scattering mechanism that dominates the effective thermal boundary resistance under different transition layer thicknesses and temperatures is ana-lyzed.The results show that the phonon-grain boundary scattering inside the transition layer plays a dominant role,and the residual stress in the transition layer also has a significant effect on the thermal boundary resistance of heterostructures.
关键词
界面热阻模型/半导体异质结/过渡层/声子-晶界散射Key words
thermal boundary resistance model/semiconductor heterostructures/transition layer/phonon-grain boundary scattering引用本文复制引用
基金项目
国家自然科学基金资助项目(51825601)
出版年
2024
NETL
NSTL
维普
万方数据