Preparation and properties of low-temperature curable positive-tone photosensitive polyimide
Along with the development of rewiring layer semiconductor packaging technology,the requirements for lithogra-phy performance,mechanical properties,thermodynamic properties and chemical resistance of positive photosensitive materials that can be cured at low temperature are getting higher and higher.Therefore,a positive photosensitive polyimide material that can be cured at low temperature was developed.In the N-methylpyrrolidone(NMP)solvent,4,4′-oxydiphthalic anhydride was polymer-ized with 2,2′-bis[3-(3-aminobenzamide)-4-hydroxyphenyl]hexafluoropropane,silicon diamine(SiDA)and 3-aminophenol to obtain polyamic acid,and then the carboxyl group was esterified to obtain polyamic acid ester(PAE).PAE was dissolved in γ-butyr-olactone with photosensitive agent napthoquinone diazide compounds,phenolic ester type thermal crosslinking agent,coupling agent KBM-1403 and imidization catalyst 2,6-dimethylpiperidine to obtain a low temperature curable p-PSPI glue.The water-based alkaline development performance of p-PSPI was tested.Under the condition of film thickness of 15 μm,the lithography resolution can reach 10 μm;after curing at 200℃,the p-PSPI was characterized by Fourier transform infrared spectroscopy,dynamic thermo-mechanical analyzer and thermogravimetric analyzer.The results showed that the imidization rate of p-PSPI was more than 98%,the tensile strength was 108.4 MPa,the elongation at break was 10.35%,the storage modulus(150℃)was 2.18 GPa,and the 5%weight loss temperature was 367.69℃.After chemical resistance test,p-PSPI has excellent chemical resistance to organic solvents(NMP,Dimethyl sulfoxide and acetone),to acid-base(30%HNO3,30%H2SO4,1%HF and 5%KOH),and oxidant(10%H2O2).It can meet the process conditions of semiconductor packaging under low-temperature curing conditions.
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