The Third-generation Semiconductor Gallium Nitride Material Single Crystal Preparation Technology and Application Prospect
With the development of science and technology,semiconductor materials are closely related to people's lives.As a representative of the third generation semiconductor materials,gallium nitride has the advantages of the wide band gap,low dielectric coefficient,high electron mobility,high thermal conductivity,and radiation resistance,and is widely used in optoelectronic devices and microelectronics.In this paper,the principle,advantages,and disadvantages of the preparation methods of gallium nitride one-dimensional nanowires and single crystal substrates(such as VLS method,HVPE method,ammonia thermal method,etc.)are described in detail.The applications in the fields of optoelectronics,radio frequency,and electronic power are briefly described,and future development prospects are prospected.
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