摘要
随着科技的发展,半导体材料与人们的生活息息相关.氮化镓作为第三代半导体材料的代表,具有宽禁带、介电系数小、高电子迁移率、高热导率和耐辐射的优点,广泛用于光电器件、微电子领域中.本文详细阐述了氮化镓一维纳米线、单晶衬底的制备方法的原理及优缺点(如VLS法、HVPE法、氨热法等)、简述了在光电、射频、电子电力领域中的应用,并展望了未来的发展前景.
Abstract
With the development of science and technology,semiconductor materials are closely related to people's lives.As a representative of the third generation semiconductor materials,gallium nitride has the advantages of the wide band gap,low dielectric coefficient,high electron mobility,high thermal conductivity,and radiation resistance,and is widely used in optoelectronic devices and microelectronics.In this paper,the principle,advantages,and disadvantages of the preparation methods of gallium nitride one-dimensional nanowires and single crystal substrates(such as VLS method,HVPE method,ammonia thermal method,etc.)are described in detail.The applications in the fields of optoelectronics,radio frequency,and electronic power are briefly described,and future development prospects are prospected.
基金项目
广东省自然科学杰出青年项目(2022B1515020073)
深圳大学教学改革研究项目(2022)(JG2022035)
NETL
NSTL
万方数据