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福建省氮化镓外延专利技术现状与发展建议

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氮化镓作为宽禁带半导体材料的代表之一,在电力电子、微波通信、光伏逆变、照明等应用领域具有硅材料无法企及的优势,有重大战略意义.本文以氮化镓外延技术专利活动情况为研究目标,从专利申请趋势、专利地域分布、主要申请人和技术领域分布等角度进行对比分析,梳理专利技术现状,并对福建省氮化镓外延技术发展提出相关建议.
Patent Technology Status and Development Suggestions of Gallium Nitride Epitaxy in Fujian Province
Gallium nitride,as one of the representatives of wide bandgap semiconductor materials,has significant strategic significance in applications such as power electronics,microwave communication,photovoltaic inverters,and lighting that silicon materials cannot match.This article takes the patent activity of gallium nitride epitaxial technology as the research objective,and conducts a comparative analysis from the perspectives of patent application trends,patent geographical distribution,main applicants,and technical field distribution.It summarizes the current status of patent technology and puts forward relevant suggestions for the development of gallium nitride epitaxial technology in Fujian Province.

gallium nitridegallium nitride epitaxywide bandgap semiconductorpatent analysispatent layout

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福建省知识产权保护中心,福建 福州 350108

氮化镓 氮化镓外延 宽禁带半导体 专利分析 专利布局

福建省市场监督管理局科技项目(2022)福建省宽禁带功率半导体器件产业专利导航项目

FJMS2022030

2024

广东化工
广东省石油化工研究院

广东化工

影响因子:0.288
ISSN:1007-1865
年,卷(期):2024.51(5)
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